English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/56178
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

Combined effects of semiconductor gain dynamics, spin dynamics and thermal shift in polarization selection in VCSELs

AutorSan Miguel, Maxi ; Balle, Salvador ; Mulet, Josep; Mirasso, Claudio R. ; Tolkachova, E.; Tredicce, Jorge R.
Fecha de publicación14-jul-2000
EditorSociety of Photo-Optical Instrumentation Engineers
CitaciónPhysics and Simulation of Optoelectronic Devices VIII: 3944, 242-251 (2000)
SerieSPIE Proceedings
3944
ResumenWe discuss mechanisms of polarization switching (PS) in Vertical Cavity Surface Emitting Lasers (VCSELs) within a mesoscopic approach based on an explicit form of a frequency- dependent complex susceptibility of the QW semi-conductor material. Cavity anisotropies, spin carrier dynamics and thermal shift of the gain curve are also taken into account in this framework. For large birefringence we find a PS due to thermal shift. For small birefringence we find a different PS, from the high-gain to the low-gain polarization state, that occurs at constant temperature. We characterize polarization partition noise in terms of power spectra. Transverse effects for PS in gain guided VCSELs are also considered.
Versión del editorhttp://dx.doi.org/10.1117/12.391426
URIhttp://hdl.handle.net/10261/56178
DOI10.1117/12.391426
Aparece en las colecciones: (IMEDEA) Libros y partes de libros
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
Combined effects of semiconductor gain dynamics.pdf731,57 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 

Artículos relacionados:


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.