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Critical separation for efficient Tm³+–Tm³+ energy transfer evidenced in nanostructured Tm³+:Al₂O₃ thin films

AuthorsXiao, Zhisong; Serna, Rosalía ; Xu, Fei ; Afonso, Carmen N.
Keywords[OCIS] ntegrated optics : Integrated optics materials
[OCIS] Materials : Rare-earth-doped materials
[OCIS] Optoelectronics : Photoluminescence
[OCIS] Spectroscopy : Spectroscopy, fluorescence and luminescence
Issue Date14-Mar-2008
PublisherOptical Society of America
CitationOptics Letters, 33(6):608-610(2008)
AbstractNanostructured amorphous Al oxide (a-Al₂O₃) thin films doped with Tm³+ were synthesized by alternate pulsed laser deposition. The Tm³+ ions have been deposited in layers with in-depth separation ranging from 0.75 to 6nm . The films show two broad emission bands originated from the Tm³+ ³H₄ → ³F₄ and ³F₄ → ³H₆ transitions. Their intensity increases at a similar rate and the lifetimes are not modified as the layer separation decreases down to 1.5nm , suggesting that there is no concentration quenching. At the critical value of 1.5nm the onset of Tm³+ – Tm³+ energy transfer is evidenced by a sharp decrease of the emission intensity and lifetime. Below this critical value, the rate at which the intensity increases for the ³F₄ → ³H₆ transition is much higher than that for the ³H₄ → ³F₄ transition, evidencing quenching of the ³H₄ → ³F₄ transition through a cross-relaxation mechanism. The control of the Tm³+ ions in the nanometer scale allows evidencing the onset of energy transfer processes among ions and offers a route to optimize compact photonic gain integrated devices.
Description3 pags. ; 2 figs.
Publisher version (URL)http://dx.doi.org/10.1364/OL.33.000608
Appears in Collections:(CFMAC-IO) Artículos
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