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dc.contributor.authorSánchez, David-
dc.contributor.authorMoscoso, M.-
dc.contributor.authorBonilla, Luis L.-
dc.contributor.authorPlatero, Gloria-
dc.contributor.authorAguado, Ramón-
dc.date.accessioned2012-07-16T07:45:12Z-
dc.date.available2012-07-16T07:45:12Z-
dc.date.issued2000-
dc.identifierdoi: 10.1016/S1386-9477(99)00311-2-
dc.identifierissn: 1386-9477-
dc.identifier.citationPhysica E: Low-Dimensional Systems and Nanostructures 7: 299-301 (2000)-
dc.identifier.urihttp://hdl.handle.net/10261/53329-
dc.description.abstractA self-consistent microscopic model of sequential tunneling in superlattices is employed to investigate self-sustained current oscillations. Current spikes - high-frequency modulation due to well-to-well hopping of charge monopole domain walls - are naturally reproduced. Moreover, as the contact doping shrinks, the recycling and motion of charge dipoles resulting in a lower-frequency oscillatory mode is predicted. For low contact doping, this mode dominates and monopole oscillations disappear. At intermediate doping, hysteresis between both the oscillatory modes may be possible.-
dc.description.sponsorshipThis work has been supported by the DGES (Spain) grants PB97-0088 and PB96-0875, by the European Union TMR contracts ERB FMBX-CT97-0157 and FMRX-CT98-0180 and by the Community of Madrid, project 07N=0026=1998-
dc.language.isoeng-
dc.publisherElsevier-
dc.rightsclosedAccess-
dc.titleDynamics of electric field domain walls in semiconductor superlattices-
dc.typeartículo-
dc.identifier.doi10.1016/S1386-9477(99)00311-2-
dc.date.updated2012-07-16T07:45:12Z-
dc.description.versionPeer Reviewed-
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.languageiso639-1en-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairetypeartículo-
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