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Optical properties of GaAs/GaP strained-layer superlattices

AuthorsRecio Segoviano, Miguel ; Armelles Reig, Gaspar ; Meléndez Sánchez, Juan ; Briones Fernández-Pola, Fernando
Issue Date1990
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 67: 2044-2050 (1990)
AbstractThe optical properties of a novel system, the GaAs/GaP strained-layer superlattice, are studied and compared with a theoretical model. Photoluminescence and photoreflectance measurements revealed that among the set of superlattices under study type-I and type-II behaviors (similar to those found in the lattice-matched GaAs/AlAs system) are present. The evolution of the photoluminescence peaks as a function of temperature and excitation density supported the assignment of the transitions involved. This is to our knowledge the first observation of direct (type-I) and indirect (type-II) transitions in strained-layer superlattices. A comparison with a theoretical model has led to an estimation of the conduction-band offset as 0.4 eV, which is the first value obtained from experiment in a GaAs/GaP heterojunction.
Identifiersdoi: 10.1063/1.345588
issn: 0021-8979
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