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dc.contributor.authorSchoenaker, F. J.-
dc.contributor.authorCórdoba, R.-
dc.contributor.authorFernández-Pacheco, Rodrigo-
dc.contributor.authorMagen, Cesar-
dc.contributor.authorStephan, Odile-
dc.contributor.authorZuriaga-Monroy, C.-
dc.contributor.authorIbarra, M. Ricardo-
dc.contributor.authorTeresa, José María de-
dc.date.accessioned2012-07-04T07:40:08Z-
dc.date.available2012-07-04T07:40:08Z-
dc.date.issued2011-
dc.identifierdoi: 10.1088/0957-4484/22/26/265304-
dc.identifierissn: 0957-4484-
dc.identifiere-issn: 1361-6528-
dc.identifier.citationNanotechnology 22(26): 265304 (2011)-
dc.identifier.urihttp://hdl.handle.net/10261/52752-
dc.description.abstractTitanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF2 as a precursor gas. Etch rates up to 1.25 × 10- 3νm3s- 1 and minimum pattern sizes of 80nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed. © 2011 IOP Publishing Ltd.-
dc.description.sponsorshipFinancial support by the Spanish Ministry of Science (through project MAT2008-06567-C02 including FEDER funding), and the Aragon Regional Government is acknowledged.-
dc.language.isoeng-
dc.publisherInstitute of Physics Publishing-
dc.rightsclosedAccess-
dc.titleFocused electron beam induced etching of titanium with XeF2-
dc.typeArtículo-
dc.identifier.doi10.1088/0957-4484/22/26/265304-
dc.date.updated2012-07-04T07:40:08Z-
dc.description.versionPeer Reviewed-
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