English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52409
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Polysilicon interdigitated electrodes as impedimetric sensors

AuthorsDe la Rica Quesada, Roberto; Fernández-Sánchez, César; Baldi Coll, Antonio
KeywordsInterdigitated electrodes
Polysilicon
Impedimetric sensor
Conductometric sensor
Biosensor
Issue DateAug-2006
PublisherElsevier
CitationElectrochemistry Communications
AbstractThe suitability of polysilicon as a material for the fabrication of interdigitated electrodes and their application to the development of sensors is studied in this work. The main interest in using this material lies in the possibility of obtaining integrated sensors with commercial CMOS technologies and simple post-processing steps. Electrodes with 3μm finger width and 3, 10, and 20μm spacing were fabricated and characterised. Conductivity measurements in the range from 4 to 50μS/cm yielded a linear response with cell constants of 0.04cm-1, 0.15cm-1 and 0.33cm-1, respectively. Permittivity measurements in the range from εr = 80.1 to εr = 1.89 yielded a linear response and similar cell constants. The possibility to functionalise both the electrode fingers and the space in between them using a single silanisation process is an interesting advantage of polysilicon electrodes. An urease-based biosensor was obtained with this procedure and characterisation results are reported.
Publisher version (URL)http://dx.doi.org/10.1016/j.elecom.2006.05.028
URIhttp://hdl.handle.net/10261/52409
DOI10.1016/j.elecom.2006.05.028
ISSN1388-2481
Appears in Collections:(IMB-CNM) Artículos
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.