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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52329
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dc.contributor.authorDotor, María Luisa-
dc.contributor.authorHuertas, P.-
dc.contributor.authorMeléndez Sánchez, Juan-
dc.contributor.authorMazuelas Esteban, Ángel José-
dc.contributor.authorGarriga, M.-
dc.contributor.authorGolmayo, Dolores-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.date.accessioned2012-06-27T09:54:00Z-
dc.date.available2012-06-27T09:54:00Z-
dc.date.issued1992-
dc.identifierissn: 0013-5194-
dc.identifier.citationElectronics Letters 28: 935-937 (1992)-
dc.identifier.urihttp://hdl.handle.net/10261/52329-
dc.description.abstractA single monolayer thick InAs quantum well laser structure has been grown at low substrate temperature by atomic layer molecular beam epitaxy (ALMBE). The laser has an emission wavelength of approximately 884 nm and a threshold current density of 1.97 kA/cm2 at room temperature. This value is lower than values obtained for other monolayer thick quantum well lasers, and it demonstrates the device quality of epitaxial layers grown at 350°C by ALMBE.-
dc.language.isoeng-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.rightsclosedAccess-
dc.titleQuantum well laser with single InAs monolayer in active region-
dc.typeArtículo-
dc.date.updated2012-06-27T09:54:00Z-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMN-CNM) Artículos
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