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Quantum well laser with single InAs monolayer in active region

AuthorsDotor, María Luisa ; Huertas, P.; Meléndez Sánchez, Juan ; Mazuelas Esteban, Ángel José ; Garriga, M.; Golmayo, Dolores ; Briones Fernández-Pola, Fernando
Issue Date1992
PublisherInstitute of Electrical and Electronics Engineers
CitationElectronics Letters 28: 935-937 (1992)
AbstractA single monolayer thick InAs quantum well laser structure has been grown at low substrate temperature by atomic layer molecular beam epitaxy (ALMBE). The laser has an emission wavelength of approximately 884 nm and a threshold current density of 1.97 kA/cm2 at room temperature. This value is lower than values obtained for other monolayer thick quantum well lasers, and it demonstrates the device quality of epitaxial layers grown at 350°C by ALMBE.
Identifiersissn: 0013-5194
Appears in Collections:(IMN-CNM) Artículos
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