English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/52317
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Photoluminescence study of type I and type II GaAs/GaP strained-layer superlattices grown on GaAs substrates

AuthorsArmelles Reig, Gaspar ; Recio Segoviano, Miguel ; Meléndez Sánchez, Juan ; Ruiz, A.; Briones Fernández-Pola, Fernando ; Khirouni, Kamel; Barrau, Jean
Issue Date1989
PublisherInstitute of Pure and Applied Physics
CitationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 28: 1495-1498 (1989)
AbstractWe studied the photoluminescence emission from short-period GaAs-GaP strained-layer superlattices grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs substrates. The observed peaks as functions of the temperature, excitation power and design parameters (period and strain accommodated in the constituent layers) were studied. Amongst the samples under study we found spatially direct (type I) and indirect (type II) superlattices. Good agreement between experiments and calculations were found for a conduction-band offset of 0.4 eV.
Identifiersdoi: 10.1143/JJAP.28.L1495
issn: 0021-4922
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.