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Title

Photoluminescence study of type I and type II GaAs/GaP strained-layer superlattices grown on GaAs substrates

AuthorsArmelles Reig, Gaspar ; Recio Segoviano, Miguel ; Meléndez Sánchez, Juan ; Ruiz, A.; Briones Fernández-Pola, Fernando ; Khirouni, Kamel; Barrau, Jean
Issue Date1989
PublisherInstitute of Pure and Applied Physics
CitationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 28: 1495-1498 (1989)
AbstractWe studied the photoluminescence emission from short-period GaAs-GaP strained-layer superlattices grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs substrates. The observed peaks as functions of the temperature, excitation power and design parameters (period and strain accommodated in the constituent layers) were studied. Amongst the samples under study we found spatially direct (type I) and indirect (type II) superlattices. Good agreement between experiments and calculations were found for a conduction-band offset of 0.4 eV.
URIhttp://hdl.handle.net/10261/52317
DOI10.1143/JJAP.28.L1495
Identifiersdoi: 10.1143/JJAP.28.L1495
issn: 0021-4922
Appears in Collections:(IMN-CNM) Artículos
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