English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/52251
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n(GaP)m(GaAs)n(InP)m superlattices grown by Atomic Layer Molecular Beam Epitaxy.

AutorBallesteros, Carmen; Gerthsen, D.; Mazuelas Esteban, Ángel José ; Ruiz, A.; Briones Fernández-Pola, Fernando
Fecha de publicación1994
EditorTaylor & Francis
CitaciónPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties 69: 871-880 (1994)
ResumenAlternately-strained-layer of (GaAs)n(GaP)m(GaAs)n(InP)m, superlattices with n = 10, 90 and m = 2 monolayers, have been characterized by X-ray diffraction and high-resolution transmission electron microscopy. The heterostructures were grown by atomic layer molecular beam epitaxy on GaAs semi-insulating substrates at a substrate temperature of 710K. All the structures were coherent with the substrate and there is an effective compensation of the strains due to GaP and InP layers. X-ray diffraction and high-resolution electron microscopy analysis indicate a high crystalline quality with layers thickness deviations of ± 1 monolayer from the designed value.
URIhttp://hdl.handle.net/10261/52251
Identificadoresissn: 0141-8610
Aparece en las colecciones: (IMN-CNM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.