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AC response of 2H–NbSe2 single crystals with electron-irradiation-induced defects

AuthorsBartolomé, Elena ; Bartolomé, Juan
Issue Date2010
PublisherInstitute of Physics Publishing
CitationJournal of Physics Condensed Matter 22(29): 295702 (2010)
AbstractThe generation of defects in NbSe2 single crystals by electron irradiation has been investigated by a combination of ac susceptibility and structural measurements. Remarkably, thanks to the layered structure of NbSe2, we show that electronic irradiation cannot only create point defects but also in-plane extended defects, which modify anisotropically the ac response. Indeed, the analysis of the onset of the nonlinear susceptibility response, Hacl(T), as a function of irradiation dose and field orientation shows a correlated increase in the density of anisotropic defects induced by electron irradiation. Also, we measured a decrease in the strength of the pinning (Labusch) constant αL accounting for elastic vortex oscillations within the linear Campbell regime for high-dose-irradiated samples in a transverse field, again compatible with the presence of planar defects hindering vortex pinning. X-ray powder diffraction and TEM electron diffraction measurements suggest these in-plane defects may result from the rupture of Se–Se bonds and the formation of nanorods and nanowires by NbSe2 sheet rolling.
Identifiersdoi: 10.1088/0953-8984/22/29/295702
issn: 0953-8984
e-issn: 1361-648X
Appears in Collections:(ICMA) Artículos
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