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Título: | Electronic structure of strained-layer AlAs/InAs (001) superlattices |
Autor: | Arriaga, J.; Armelles Reig, Gaspar CSIC ORCID; Muñoz, M. C.; Rodríguez Martín, José María CSIC; Castrillo, Pedro CSIC ORCID; Recio Segoviano, Miguel CSIC; Velasco, V. R. CSIC ORCID; Briones Fernández-Pola, Fernando CSIC; García-Moliner, F. | Fecha de publicación: | 1991 | Citación: | Physical Review B 43: 2050-2057 (1991) | Resumen: | (001) superlattices containing 15 principal layers of AlAs and either one or two of InAs have been grown by atomic-layer molecular-beam epitaxy on undoped (001) GaAs substrates. The samples, between 0.1 and 0.3 m thick, have been studied by photoluminescence, electroreflectance, and piezoreflectance and monitored by phonon Raman-scattering spectroscopy and x-ray diffractometry. An empirical tight-binding model, combined with surface Green-function matching, is used to discuss the experimental data. An overall picture is obtained for the electronic structure of these superlattices with a valence-band offset close to 0.5 eV, which is consistent with the observed spectra. © 1991 The American Physical Society. | URI: | http://hdl.handle.net/10261/52157 | DOI: | 10.1103/PhysRevB.43.2050 | Identificadores: | doi: 10.1103/PhysRevB.43.2050 issn: 0163-1829 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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PhysRevB.43.2050.pdf | 403,22 kB | Adobe PDF | Visualizar/Abrir |
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