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dc.contributor.authorArriaga, J.-
dc.contributor.authorArmelles Reig, Gaspar-
dc.contributor.authorMuñoz, M. C.-
dc.contributor.authorRodriguez, J. M.-
dc.contributor.authorCastrillo, Pedro-
dc.contributor.authorRecio Segoviano, Miguel-
dc.contributor.authorVelasco, V. R.-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.contributor.authorGarcía-Moliner, F.-
dc.date.accessioned2012-06-25T12:35:59Z-
dc.date.available2012-06-25T12:35:59Z-
dc.date.issued1991-
dc.identifierdoi: 10.1103/PhysRevB.43.2050-
dc.identifierissn: 0163-1829-
dc.identifier.citationPhysical Review B 43: 2050-2057 (1991)-
dc.identifier.urihttp://hdl.handle.net/10261/52157-
dc.description.abstract(001) superlattices containing 15 principal layers of AlAs and either one or two of InAs have been grown by atomic-layer molecular-beam epitaxy on undoped (001) GaAs substrates. The samples, between 0.1 and 0.3 m thick, have been studied by photoluminescence, electroreflectance, and piezoreflectance and monitored by phonon Raman-scattering spectroscopy and x-ray diffractometry. An empirical tight-binding model, combined with surface Green-function matching, is used to discuss the experimental data. An overall picture is obtained for the electronic structure of these superlattices with a valence-band offset close to 0.5 eV, which is consistent with the observed spectra. © 1991 The American Physical Society.-
dc.description.sponsorshipThis work was partly supported by the Spanish Comision Interministerial de Ciencia y Tecnologia under Grant No. MAT88-0547. One of the authors, J. Arriaga, is indebted to Consejo Nacional de Ciencia y Tecnologia (CONACYT) (Mexico) for support-
dc.language.isoeng-
dc.rightsopenAccess-
dc.titleElectronic structure of strained-layer AlAs/InAs (001) superlattices-
dc.typeArtículo-
dc.identifier.doi10.1103/PhysRevB.43.2050-
dc.date.updated2012-06-25T12:35:59Z-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMN-CNM) Artículos
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