Confined optical phonons in GaAs/GaP strained layer superlattices

Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/52139

COMPARTIR / EXPORTAR:

SHARE BASE	Comparte tu historia de Acceso Abierto
Visualizar otros formatos: MARC \| Dublin Core \| RDF \| ORE \| MODS \| METS \| DIDL \| DATACITE
Refman EndNote Bibtex RefWorks Excel CSV PDF DataCite Send via email

Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Armelles Reig, Gaspar	-
dc.contributor.author	Ruiz, A.	-
dc.contributor.author	Briones Fernández-Pola, Fernando	-
dc.contributor.author	Recio Segoviano, Miguel	-
dc.date.accessioned	2012-06-25T11:38:46Z	-
dc.date.available	2012-06-25T11:38:46Z	-
dc.date.issued	1989	-
dc.identifier	issn: 0038-1098	-
dc.identifier.citation	Solid State Communications 71: 431-434 (1989)	-
dc.identifier.uri	http://hdl.handle.net/10261/52139	-
dc.description.abstract	In this letter we report on Raman characterization of GaAs/GaP short period strained layer superlattices grown on GaAs (100) substrates by Atomic layer Molecular Beam Epitaxy (ALMBE). Confined optical phonons are observed in this highly strained system. The experimental results are compared with a calculation based on the equivalent wave-vector model. © 1989.	-
dc.language.iso	eng	-
dc.publisher	Elsevier	-
dc.rights	closedAccess	-
dc.title	Confined optical phonons in GaAs/GaP strained layer superlattices	-
dc.type	artículo	-
dc.date.updated	2012-06-25T11:38:47Z	-
dc.description.version	Peer Reviewed	-
dc.type.coar	http://purl.org/coar/resource_type/c_6501	es_ES
item.languageiso639-1	en	-
item.fulltext	No Fulltext	-
item.openairecristype	http://purl.org/coar/resource_type/c_18cf	-
item.cerifentitytype	Publications	-
item.grantfulltext	none	-
item.openairetype	artículo	-
Aparece en las colecciones:	(IMN-CNM) Artículos