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Confined optical phonons in GaAs/GaP strained layer superlattices

AuthorsArmelles Reig, Gaspar ; Ruiz, A.; Briones Fernández-Pola, Fernando ; Recio Segoviano, Miguel
Issue Date1989
CitationSolid State Communications 71: 431-434 (1989)
AbstractIn this letter we report on Raman characterization of GaAs/GaP short period strained layer superlattices grown on GaAs (100) substrates by Atomic layer Molecular Beam Epitaxy (ALMBE). Confined optical phonons are observed in this highly strained system. The experimental results are compared with a calculation based on the equivalent wave-vector model. © 1989.
Identifiersissn: 0038-1098
Appears in Collections:(IMN-CNM) Artículos
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