Photoinduced defects creation on sulfur passivated surface of GaAs

Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/50647

COMPARTIR / EXPORTAR:

SHARE BASE	Comparte tu historia de Acceso Abierto
Visualizar otros formatos: MARC \| Dublin Core \| RDF \| ORE \| MODS \| METS \| DIDL \| DATACITE
Refman EndNote Bibtex RefWorks Excel CSV PDF DataCite Send via email

Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Zytkiewicz, Z. R.	-
dc.date.accessioned	2012-06-04T07:40:06Z	-
dc.date.available	2012-06-04T07:40:06Z	-
dc.date.issued	1997	-
dc.identifier	issn: 0587-4246	-
dc.identifier.citation	Acta Physica Polonica A 92: 1083-1086 (1997)	-
dc.identifier.uri	http://hdl.handle.net/10261/50647	-
dc.description.abstract	We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH4)2Sx solution. The results are discussed in terms of a photoinduced process of the AsGa antisite generation on the sulfurized surface of GaAs.	-
dc.language.iso	eng	-
dc.publisher	Polish Academy of Sciences	-
dc.rights	closedAccess	-
dc.title	Photoinduced defects creation on sulfur passivated surface of GaAs	-
dc.type	artículo	-
dc.date.updated	2012-06-04T07:40:06Z	-
dc.description.version	Peer Reviewed	-
dc.type.coar	http://purl.org/coar/resource_type/c_6501	es_ES
item.openairetype	artículo	-
item.grantfulltext	none	-
item.cerifentitytype	Publications	-
item.openairecristype	http://purl.org/coar/resource_type/c_18cf	-
item.fulltext	No Fulltext	-
item.languageiso639-1	en	-
Aparece en las colecciones:	(IMN-CNM) Artículos