English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/50647
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Photoinduced defects creation on sulfur passivated surface of GaAs

AuthorsZytkiewicz, Z. R.
Issue Date1997
PublisherPolish Academy of Sciences
CitationActa Physica Polonica A 92: 1083-1086 (1997)
AbstractWe report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH4)2Sx solution. The results are discussed in terms of a photoinduced process of the AsGa antisite generation on the sulfurized surface of GaAs.
URIhttp://hdl.handle.net/10261/50647
Identifiersissn: 0587-4246
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.