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Comparison between as-grown and annealed quantum dots morphology

AuthorsFerrer, Juan Carlos; Peiró, F.; Cornet, A.; Morante, J. R.; Utzmeier, T.; Armelles Reig, Gaspar ; Briones Fernández-Pola, Fernando
Issue Date1997
PublisherTrans Tech Publications
CitationMaterials Science Forum 258-263: 1689-1694 (1997)
AbstractInSb self-assembled islands have been grown by epitaxial deposition on InP substrates, and the effect of an annealing process has been studied. Transmission electron microscopy and atomic force microscopy observations have been performed before and after annealing the InSb islands in order to assess the effects on the dot morphology and on their distribution on the wafer surface. Measurements of high-energy electron diffraction during the growth indicate a three-dimensional growth beyond the onset of 1.1 InSb monolayer deposition, obtaining InSb islands. It has been confirmed that the annealing process after the InSb deposition improves the dots quality. Whereas as-grown islands have a relatively inhomogeneous shape, the annealed sample has a uniform distribution of well defined dots. Dots are slightly elongated along the [110] direction. In both cases the substrate surface has developed an anisotropic undulation parallel to dot elongation direction. Raman measurements show a more intense peak in the annealed dot spectra confirming the formation of better quality islands.
Identifiersissn: 0255-5476
Appears in Collections:(IMN-CNM) Artículos
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