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Epitaxy, strain and morphology of low Ar pressure sputtered Pt thin films

AuthorsMenéndez, José Luis ; Caro, P.; Cebollada, Alfonso
Issue Date1998
CitationJournal of Crystal Growth 192: 164-174 (1998)
AbstractWe show that the use of low Ar pressures in the sputter deposition process leads to the growth of epitaxial Pt thin films on MgO(1 0 0) and (1 1 0) at moderate temperatures. This is due to the low thermalization of the Pt particles impinging on the substrate, and the subsequent generation of a high density of nucleation centers as well as an increase in the effective surface temperature. Despite the fact that the MgO lattice parameter is 7.4% larger than that of Pt, this higher particle energy distribution leads to a stronger film-substrate interaction and therefore to an unrelaxed, in-plane compressive strained growth. Distinct release of this compressive strain depending on growth temperature and crystalline orientation produces strong changes in the morphology of the films, leading to a 2D-3D transition for the (1 1 0) structures grown between 600 and 700°C. © 1998 Elsevier Science B.V. All rights reserved.
Identifiersissn: 0022-0248
Appears in Collections:(IMN-CNM) Artículos
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