Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/50635
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Campo DC | Valor | Lengua/Idioma |
---|---|---|
dc.contributor.author | Koo, B. J. | - |
dc.contributor.author | Harris, J. J. | - |
dc.contributor.author | Gardner, N. R. | - |
dc.contributor.author | Domínguez, Pablo S. | - |
dc.date.accessioned | 2012-06-04T07:19:43Z | - |
dc.date.available | 2012-06-04T07:19:43Z | - |
dc.date.issued | 1999 | - |
dc.identifier | doi: 10.1016/S0026-2692(98)00143-8 | - |
dc.identifier | issn: 0026-2692 | - |
dc.identifier.citation | MICROELECTRONICS JOURNAL 30: 403-407 (1999) | - |
dc.identifier.uri | http://hdl.handle.net/10261/50635 | - |
dc.description.abstract | We have studied the light emission from lateral p-n junctions grown by MBE on patterned GaAs (100) substrates. The junctions were located at the upper and lower boundaries between (100) flat/(311)A facet combinations. Electrical measurements showed that, under low bias, tunnelling dominated the current flow, but the level was sample- and junction-dependent. We attribute these differences to growth-dependant Ga migration rates at the flat-facet interfaces, with consequent formation of mid-gap states which assist in the tunnelling process. Above approximately 0.5 V forward bias, the diffusive current component became dominant, although partly masked by non-linear series resistance effects. In this higher voltage regime, significant light emission was observed, particularly from the lower p-n junctions. The external quantum efficiencies varied from approximately 0.1% for the upper junctions to as high as 7.3% for the best lower junction. This difference was correlated with the degree of tunnelling, suggesting that the mid-gap states involved in this process can also act as non-radiative recombination centres for the diffusively injected carriers. | - |
dc.language.iso | eng | - |
dc.publisher | Elsevier | - |
dc.rights | closedAccess | - |
dc.title | Light emission and the quantum efficiency of lateral p-n junctions on patterned GaAs (100) substrates | - |
dc.type | artículo | - |
dc.identifier.doi | 10.1016/S0026-2692(98)00143-8 | - |
dc.date.updated | 2012-06-04T07:19:43Z | - |
dc.description.version | Peer Reviewed | - |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
Page view(s)
282
checked on 24-abr-2024
Download(s)
99
checked on 24-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.