English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/50591
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Epitaxial growth of AlN on sapphire (0 0 0 1) by sputtering: A structural, morphological and optical study

AuthorsHuttel, Yves ; Gómez, H.; Cebollada, Alfonso ; Armelles Reig, Gaspar ; Alonso, M. I.
Issue Date2002
PublisherElsevier
CitationJournal of Crystal Growth 242: 116-123 (2002)
AbstractWe report on the growth conditions dependence of the morphology and structural quality of epitaxial AlN thin films deposited by normal incidence reactive sputtering. The crystallographic quality is increased for higher concentrations of nitrogen in the plasma during the deposition process. Also the presence of an intermediate AlN buffer is found to reduce the stress induced by the substrate and to enhance the quality of the subsequent AlN deposit; the morphology and roughness of the surface of the deposit depend on the deposition temperature of the buffer layer. From spectroscopic ellipsometry measurements we deduce and present the evolution of the refractive index and extinction coefficient with the wavelength for AlN deposits obtained under different growth conditions. © 2002 Elsevier Science B.V. All rights reserved.
URIhttp://hdl.handle.net/10261/50591
DOI10.1016/S0022-0248(02)01375-1
Identifiersdoi: 10.1016/S0022-0248(02)01375-1
issn: 0022-0248
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.