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Título

Improvement of the temperature characteristic of 1.3 μm Gainasp laser diodes with GaInAsP/InP short-period superlattice barriers

AutorPostigo, Pablo Aitor ; Golmayo, Dolores ; Gómez, H.; Rodríguez, D.; Dotor, María Luisa
Fecha de publicación2002
EditorInstitute of Pure and Applied Physics
CitaciónJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes 41: L565-L567 (2002)
ResumenWe report on the characteristics of tensile-strained 1.3 μm InGaAsP multi-quantum well lasers with InP/GaInAsP short-period superlattices (SPSLs) in barriers and waveguide. Growth was carded out by all solid source atomic layer molecular beam epitaxy (ALMBE) without growth interruptions. Infinite length threshold current densities are as low as 176 A/cm2 per quantum well for as cleaved broad area lasers. The values for the characteristic temperature T0 are as high as 90 K for cavity lengths of 1200 μm. The improvement in To is attributed to the increased effective barrier height by the short-period superlattices.
URIhttp://hdl.handle.net/10261/50557
DOInull
Identificadoresdoi:
issn: 0021-4922
Aparece en las colecciones: (IMN-CNM) Artículos
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