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Lateral composition modulation in strain compensated (GaInP)m (GaInAs)m short-period superlattices grown on (0 0 1) InP by atomic layer molecular beam epitaxy

AutorGolmayo, Dolores ; Dotor, María Luisa ; Quintana Rodríguez, Carmen
Fecha de publicación2003
EditorElsevier
CitaciónJournal of Crystal Growth 253: 167-173 (2003)
ResumenThe lateral composition modulation of strain compensated (GaInP)m(GaInAs)m short-period superlattices (SPSL) has been investigated. Transmission electron microscopy results show that long-range lateral composition modulation is formed in m=2 SPSL grown at 400°C by atomic layer molecular beam epitaxy. The evolution of photoluminescence (PL) peak with temperature shows a blue shift with increasing temperature; in addition, low-temperature PL is strongly polarized. These properties are attributed to the lateral composition modulation. Quantum wires (QWRs) were formed using (GaInP)m(GaInAs)m SPSL as quantum wells in a multiquantum well heterostructure. The formation of QWR is confirmed by their PL properties. © 2003 Elsevier Science B.V. All rights reserved.
URIhttp://hdl.handle.net/10261/50552
DOI10.1016/S0022-0248(03)01094-7
Identificadoresdoi: 10.1016/S0022-0248(03)01094-7
issn: 0022-0248
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