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dc.contributor.authorHuttel, Yves-
dc.contributor.authorNavarro, E.-
dc.contributor.authorCebollada, Alfonso-
dc.date.accessioned2012-05-31T10:29:35Z-
dc.date.available2012-05-31T10:29:35Z-
dc.date.issued2005-
dc.identifierdoi: 10.1016/j.jcrysgro.2004.09.051-
dc.identifierissn: 0022-0248-
dc.identifier.citationJournal of Crystal Growth 273: 474-480 (2005)-
dc.identifier.urihttp://hdl.handle.net/10261/50514-
dc.description.abstractThe growth temperature depencence of the epitaxy and lattice distortion of 40 Å thick V(0 0 1) films deposited on MgO(0 0 1) by triode sputtering is presented. High-quality epitaxial films are obtained for deposition temperatures between room temperature (RT) and 400°C. For these temperatures, V grows under compression in the surface plane, matching almost perfectly the in-plane MgO lattice by a 45° rotation, irrespective of the deposition temperature and yielding to the formation of coherent V-MgO interfaces. Correspondingly, the out-of-plane V lattice parameters exhibit an expansion, maximum for room temperature deposition, that gradually decreases as deposition temperature increases. A strong reduction and the extinction of the V(200) diffraction peak is observed for 500 and 600°C deposition temperatures, respectively, probably due to the V amorphization for these deposition temperatures. © 2004 Elsevier B.V. All rights reserved.-
dc.language.isoeng-
dc.publisherElsevier-
dc.rightsclosedAccess-
dc.titleEpitaxy and lattice distortion of V in MgO/V/MgO(0 0 1) heterostructures-
dc.typeArtículo-
dc.identifier.doi10.1016/j.jcrysgro.2004.09.051-
dc.date.updated2012-05-31T10:29:35Z-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMN-CNM) Artículos
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