English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/50497
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

Characterization of optical and electrical properties of CdTe:Yb co-doped with Ge

AutorFranc, J.; Horodysky, P.; Grill, R.; Kubát, J.; Saucedo, E.; Sochinskii, N. V.
Fecha de publicación2006
EditorElsevier
CitaciónJournal of Crystal Growth 286: 384-388 (2006)
ResumenThe defect structure of CdTe doped with Yb and co-doped with Ge was investigated by a set of optical (photoluminescence, absorption, photoconductivity), galvanomagnetic and thermoelectric methods. The results can be explained by a model, in which Yb acts as a deep donor with the energy level at EV+0.3 eV corresponding to the Yb2+/Yb3+ electronic transition. Introduction of Yb with concentration 1019 cm-3 in the melt results in a decrease of electrically and optically active acceptor defects in the as-grown crystals and causes a decrease of electrical resistivity of CdTe:Ge. A line at 1.585 eV related to an exciton bound to a complex of Yb and Cd vacancy was observed both in photoluminescence and photoconductivity spectra. © 2005 Elsevier B.V. Al l rights reserved.
URIhttp://hdl.handle.net/10261/50497
DOI10.1016/j.jcrysgro.2005.10.022
Identificadoresdoi: 10.1016/j.jcrysgro.2005.10.022
issn: 0022-0248
Aparece en las colecciones: (IMN-CNM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 

Artículos relacionados:


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.