English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/50414
COMPARTIR / IMPACTO:
Estadísticas
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Título

Minor elements determination and evaluation of diffusion/segregation effects on ultra-thin layers using pulsed-RF-GD-TOFMS

AutorPisonero, J.; Hierro-Rodríguez, A. ; Quirós, Carlos ; Sanz-Medel, A.
Fecha de publicación2011
EditorRoyal Society of Chemistry (Great Britain)
CitaciónJournal of Analytical Atomic Spectrometry 26(8): 1604-1609 (2011)
ResumenDepth profile analyses of ultra-thin layers and their interfaces are investigated, using an innovative Pulsed-radiofrequency Glow Discharge Time-of-Flight Mass Spectrometer (pulsed-rf-GD-TOFMS), to obtain information about the presence of minor elements and to evaluate segregation/diffusion processes at the interfaces. A series of ultra-thin Nb/Al1¿x Co x bilayers, deposited on Si wafers by dc-magnetron sputtering, is analyzed. An Al1¿x Co x layer is first deposited on the Si substrate with controlled constant thickness (t AlCo = 6 nm), and different stoichiometries (Co atomic concentration, x = 0, 0.015, 0.035, 0.045, 0.09, 0.35). Then, a Nb layer is deposited on top of the AlCo one, with a thickness t Nb = 50 nm that is also kept constant along the whole series. Qualitative depth profiles of those layered sandwich-type samples are determined using our pulsed-rf-GD-TOFMS setup, indicating segregation of Al and Co and diffusion of Co into the Si substrate, as a function of the Co atomic concentration in the AlCo internal layer. Additionally, a linear calibration curve was achieved plotting the Co atomic concentration versus the total integrated Co ion signal, allowing the Co quantification in ultra-thin layers (6 nm). Moreover, Secondary Ion Mass Spectrometry (SIMS) was used as a reference technique to validate the high analytical potential of pulsed-rf-GD-TOFMS for the analysis of ultra-thin layers and interfaces. The comparative analytical performance of both techniques is discussed.
Descripciónet al.
URIhttp://hdl.handle.net/10261/50414
DOI10.1039/c1ja10075k
Identificadoresdoi: 10.1039/c1ja10075k
issn: 0267-9477
Aparece en las colecciones: (CINN) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 

Artículos relacionados:


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.