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Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography

AutorGarcía García, Nicolás; Cheng, Hao; Lu, Yonhua; Muñoz, Manuel; Yifang, Chen; Zhengqi, Lu; Yun, Zhou; Genhua, Pan; Zheng, Cui; Pasa, A. A.
Palabras claveMetallic thin films
Magnetoresistance
Permalloy
Nanocontacts
Electron beam lithography
Fecha de publicación24-jul-2006
EditorAmerican Institute of Physics
CitaciónarXiv:cond-mat/0607608v1 [cond-mat.mtrl-sci]
ResumenIn this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20 Oe.
Descripción15 pages, 4 figures. Accepted by APL.-- Final full-text version published 24 Aug 2006, available at: http://dx.doi.org/10.1063/1.2337538
URIhttp://hdl.handle.net/10261/4887
DOI10.1063/1.2337538
ISSN0003-6951
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