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Title

Compositional, structural and morphological modifications of N-rich Cu3N films induced by irradiation with Cu ions at 42 MeV

AuthorsGordillo, Nuria; Rivera de Mena, Antonio ; González-Arrabal, Raquel
KeywordsSemiconductors
Surfaces, interfaces and thin films
Issue Date2010
PublisherInstitute of Physics Publishing
CitationJournal of Physics D - Applied Physics 43: 345301 (2010)
AbstractN-rich Cu3N films were irradiated with Cu at 42 MeV in the fluences range from 4 × 1011 to 1 × 1014 cm−2. The radiation-induced changes in the chemical composition, structural phases, surface morphology and optical properties have been characterized as a function of ion fluence, substrate temperature and angle of incidence of the incoming ion by means of ion-beam analysis (IBA), x-ray diffraction, atomic force microscopy, profilometry and Fourier transform infrared spectroscopy techniques. IBA methods reveal a very efficient sputtering of N whose yield (5 × 103 atom/ion) is almost independent of substrate temperature (RT-300 °C) but slightly depends on the incidence angle of the incoming ion. The Cu content remains essentially constant within the investigated fluence range. All data suggest an electronic mechanism to be responsible for the N depletion. The release of nitrogen and the formation of Cu2O and metallic Cu are discussed on the basis of existing models.
DescriptionPACS 68.55.-a Thin film structure and morphology 78.30.Am Elemental semiconductors and insulators 68.35.B- Structure of clean surfaces (and surface reconstruction) 78.66.Li Other semiconductors 61.80.Jh Ion radiation effects 61.82.Fk Semiconductors
Nuria Gordillo...et al.
Publisher version (URL)http://dx.doi.org/10.1088/0022-3727/43/34/345301
URIhttp://hdl.handle.net/10261/48379
DOI10.1088/0022-3727/43/34/345301
ISSN0022-3727
Appears in Collections:(IMN-CNM) Artículos
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