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dc.contributor.authorGonzález-Arrabal, Raquel-
dc.contributor.authorRedondo-Cubero, A.-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorMartín-González, Marisol-
dc.date.accessioned2012-04-16T07:25:51Z-
dc.date.available2012-04-16T07:25:51Z-
dc.date.issued2011-04-15-
dc.identifier.citationNuclear Instruments and Methods in Physics Research - Section B 269(8): 733–738 (2011)es_ES
dc.identifier.issn0168-583X-
dc.identifier.urihttp://hdl.handle.net/10261/48268-
dc.description.abstractThe lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.es_ES
dc.description.sponsorshipThis work was supported by CSIC 2006-50F0122 and CSIC 2007-50I015. One of the authors ARC acknowledges financial support from by FCT in Portugal (BPD/74095/2010). MSMG acknowledges to ERC-2008-Stg: 240497 and to the MICINN ACI PLAN E (JAPON) PLE2009-0073 for their financial support.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/240497-
dc.rightsclosedAccesses_ES
dc.subjectIII–V Semiconductores_ES
dc.subjectInAs/GaAs thinfilmses_ES
dc.subjectRBS channellinges_ES
dc.subjectLattice order degree and straines_ES
dc.titleDepth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin filmses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/j.nimb.2011.02.004-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/j.nimb.2011.02.004es_ES
dc.contributor.funderEuropean Research Council-
dc.contributor.funderEuropean Commission-
dc.contributor.funderConsejo Superior de Investigaciones Científicas (España)-
dc.contributor.funderFundação para a Ciência e a Tecnologia (Portugal)-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000781es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003339es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100001871es_ES
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