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Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

AuthorsGonzález-Arrabal, Raquel ; Redondo-Cubero, A.; González Díez, Yolanda ; González Sotos, Luisa ; Martín-González, Marisol
KeywordsIII–V Semiconductor
InAs/GaAs thinfilms
RBS channelling
Lattice order degree and strain
Issue Date15-Apr-2011
CitationNuclear Instruments and Methods in Physics Research - Section B 269(8): 733–738 (2011)
AbstractThe lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.
Publisher version (URL)http://dx.doi.org/10.1016/j.nimb.2011.02.004
Appears in Collections:(IMN-CNM) Artículos
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