English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/48238
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

AuthorsTello Ruiz, Marta
Issue Date14-Feb-2011
PublisherInstitute of Physics Publishing
CitationSemiconductor Science and Technology 26: 034003 (2011)
AbstractWe report on an effective control of source–drain contact resistance by insertion of a self-assembled monolayer at the metal/semiconductor interface in top-gate staggered polymer field-effect transistors fabricated with poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2- b]thiophene) (pBTTT). The device performance can be dramatically improved by introducing a fluorinated alkyl-thiol, 1H, 1H, 2H, 2H-perflourodecanethiol (PFDT) on the gold source–drain contacts. The PFDT-induced interface dipole and hydrophobic surface enables both a favourable shift of work function lowering the hole injection barrier via dipole alignment and a large crystal growth of pBTTT film with a unique lamellar morphology near to the contact. The optimized device with PFDT-modified gold contact plus OTS-treated substrate exhibits a high field-effect mobility above 0.4 cm2 V−1 s−1 and low contact resistance of 0.45 M at the gate voltage of −60 V.
DescriptionMarta Tello...et al.
Publisher version (URL)http://dx.doi.org/10.1088/0268-1242/26/3/034003
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.