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dc.contributor.authorToudert, Johann-
dc.contributor.authorNúñez Sánchez, Sara-
dc.contributor.authorJiménez de Castro, Miguel-
dc.contributor.authorSerna, Rosalía-
dc.date.accessioned2012-04-11T08:16:16Z-
dc.date.available2012-04-11T08:16:16Z-
dc.date.issued2008-03-28-
dc.identifier.citationApplied Physics Letters, 92 (12) : 121111 (2008)es_ES
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/48089-
dc.description3 pags. ; 3 figs.es_ES
dc.description.abstractA structured film formed by an active Er³⁺-doped amorphous Al₂O₃ layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er³⁺-doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er³⁺ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er³⁺ ions.es_ES
dc.description.sponsorshipThis work has been supported by CICYT (Spain) under Project No. TEC2006-04538-MIC.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.rightsopenAccesses_ES
dc.subject[PACS] Optical properties of specific thin filmses_ES
dc.subject[PACS] Other solid inorganic materialses_ES
dc.subject[PACS] Thin film structure and morphologyes_ES
dc.subject[PACS] Defects and impurities: doping, implantation, distribution, concentration, etc.es_ES
dc.titlea-Si nanolayer induced enhancement of the 1.53 μm photoluminescence in Er³⁺ doped a-Al₂2O₃ thin filmses_ES
dc.typeArtículoes_ES
dc.identifier.doi10.1063/1.2900662-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2900662es_ES
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