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Título: | Silicon nanowire circuits fabricated by AFM oxidation nanolithography |
Autor: | Martínez Garrido, Ramsés Valentín CSIC ORCID; Martínez Rodrigo, Javier CSIC ORCID; García García, Ricardo CSIC ORCID | Palabras clave: | Electronics and devices Semiconductors |
Fecha de publicación: | 20-may-2010 | Editor: | Institute of Physics Publishing | Citación: | Nanotechnology 21: 245301 (2010) | Resumen: | We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way, uniform and well-defined transistors with channel widths in the 10–20 nm range have been fabricated. The nanowires can be positioned with sub-100 nm lateral accuracy. The transistors exhibit an on/off current ratio of 105. The atomic force microscope nanolithography offers full control of the nanowire's shape from straight to circular or a combination of them. It also enables the integration of several nanowires within the same circuit. The nanowire transistors have been applied to detect immunological processes. | Versión del editor: | http://dx.doi.org/10.1088/0957-4484/21/24/245301 | URI: | http://hdl.handle.net/10261/47593 | DOI: | 10.1088/0957-4484/21/24/245301 | ISSN: | 0957-4484 | E-ISSN: | 1361-6528 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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