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Título

Modelling strategies for semiconductor ring lasers

AutorPérez Serrano, Antonio ; Fürst, Sandor; Javaloyes, Julien ; Scirè, Alessandro ; Balle, Salvador ; Sorel, Marc
Palabras claveSemiconductor lasers
Ring lasers
Modal properties
Coupled cavities
Laser dynamic
Fecha de publicación2008
EditorSociety of Photo-Optical Instrumentation Engineers
CitaciónProceedings of SPIE 6997: 69971N (2008)
ResumenWe have analyzed experimentally and theoretically the modal properties of a semiconductor ring laser and the wavelength jumps that occur in connection with directional switching above threshold. A transfer matrix analysis allow us to explain the transfer function measurements when amplified spontaneous emission in the cavity is accounted for. Moreover the transfer matrix analysis permits to determine the threshold condition for the laser modes, which split in two branches due to the symmetry breaking imposed by the output coupler and output waveguides. The wavelength jumps displayed by the device above threshold are interpreted with the frequency splitting and threshold difference between these two branches of solutions, together with the redshift of the material gain.
Versión del editorhttp://dx.doi.org/10.1117/12.780847
URIhttp://hdl.handle.net/10261/47103
DOI10.1117/12.780847
ISSN1996-756X
10.1117/12.780847
E-ISSN0277-786X
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