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In situ observation of surface optical anisotropy on InP, InAs, and InSb by chemical modulation spectroscopy

AutorPostigo, Pablo Aitor ; Armelles Reig, Gaspar ; Utzmeier, T.; Briones Fernández-Pola, Fernando
Fecha de publicación15-ene-1998
EditorAmerican Physical Society
CitaciónPhysical Review B 57(3): 1362–1365 (1998)
ResumenIn situ observation of surface optical anisotropy due to In dimers in a set of three In-based semiconductor binary compounds—InP, InAs, and InSb—grown by molecular-beam epitaxy is reported. We used an optical reflection technique based on the chemical modulation of the surface, that permits the measurement with light linearly polarized in one selected polarization, usually [110] or [11¯0], typically parallel to the group-III and -V dimers. Spectra for (001) surfaces in the 1–3-eV range were obtained through this technique, and the results are compared to those previously obtained for a set of Ga-based binary compounds, GaP, GaAs and GaSb. For both sets, well-defined features for light polarized along [110] have been observed, that are attributed to transitions between the occupied group-III dimer and the unoccupied dangling-bond bands.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.57.1362
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