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Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

AuthorsFerrer, Juan Carlos; Peiró, F.; Comet, A.; Morante, J. R.; Utzmeier, T.; Armelles Reig, Gaspar ; Briones Fernández-Pola, Fernando
Issue DateDec-1996
PublisherAmerican Physical Society
CitationApplied Physics Letters 69(25): 3887 (1996)
AbstractSelf-organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmission electron microscopy. Measurement of high-energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode beyond the onset of 1.4 InSb monolayer ~ML! deposition. The dots obtained after a total deposition of 5 and 7 ML of InSb present a truncated pyramidal morphology with rectangular base oriented along the ^110& directions, elongated towards the @110# direction with $111%B lateral facets, with $113%/$114%/$111%A lateral facets in @11 ¯ 0# views, and ~001! flat top surfaces. The mismatch between the dot and the substrate has been accommodated by a network of 90° misfit dislocation at the interface. A corrugation of the InP substrate surrounding the dot has been also observed
Publisher version (URL)http://dx.doi.org/10.1063/1.117559
Appears in Collections:(IMN-CNM) Artículos
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