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Simulation of electrical parameters of new design of SLHC silicon sensors for large radii

AuthorsMilitaru, O.; González Sánchez, J. ; Jaramillo, R. ; Moya, David ; Rodrigo, Teresa ; López Virto, A. ; Vila, Iván
Issue DateMay-2010
CitationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 617(1-3): 11-21 (2010)
AbstractAs are sult of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to with stand a next remeradiation environment of up to 1016 part/2. On this basis, a new geometry with silicon short strip sensors (strixels) is proposed. Tounder stand their performances, test geometries are developed whose parameters can be verified and optimized using simulation of semiconductor structures. We have used the TCAD-ISE (SYNOPSYSpackage) software in order to simulate the main electrical parameters of different strip geometries, forp-in-n-type wafers.
Description2 páginas,1 figura, 1 tabla.-- El Pdf del artículo es la versión de autor.-- et al.
Publisher version (URL)http://dx.doi.org/10.1016/j.nima.2009.09.102
Appears in Collections:(IFCA) Artículos
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