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Título: | Enhancement of Rashba coupling in vertical In(0.05)Ga(0.95)As/GaAs quantum dots |
Autor: | Huang, S. M.; Badrutdinov, A. O.; Serra, Llorenç CSIC ORCID | Fecha de publicación: | 2011 | Citación: | Physical Review B 84: 085325 (1-5) (2011) | Resumen: | We study the spin-splitting energies in low-potential-barrier quantum dots, finding splitting energies that are orbital state dependent. The theoretical analysis is done with a generalization of the Fock-Darwin states in the presence of spin-orbit interactions. We discuss experimental evidence indicating that the Rashba interaction strength in vertical InxGa1−xAs/GaAs quantum dots is in the range 80 meV A˚ λR 120 meV A. This enhanced ˚ spin-orbit interaction can be understood from the high penetration of the electron wave function into the quantum well with low-potential barrier. | Descripción: | PACS number(s): 71.70.Ej, 72.25.Dc, 73.63.Nm | Versión del editor: | http://dx.doi.org/10.1103/PhysRevB.84.085325 | URI: | http://hdl.handle.net/10261/45817 | DOI: | 10.1103/PhysRevB.84.08532 | ISSN: | 1098-0121 | E-ISSN: | 1550-235X |
Aparece en las colecciones: | (IFISC) Artículos |
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PhysRevB.84.085325.pdf | 372,28 kB | Adobe PDF | Visualizar/Abrir |
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