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http://hdl.handle.net/10261/41992
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Perpiñà, X. | - |
dc.contributor.author | Jordà, Xavier | - |
dc.contributor.author | Mestres, Narcís | - |
dc.contributor.author | Vellvehi Hernández, Miquel | - |
dc.contributor.author | Godignon, Philippe | - |
dc.contributor.author | Millán, José | - |
dc.contributor.author | Kiedrowski, H. von | - |
dc.date.accessioned | 2011-11-03T08:57:19Z | - |
dc.date.available | 2011-11-03T08:57:19Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Measurement Science and Technology 15(5): 1011-1018 (2004) | es_ES |
dc.identifier.issn | 0957-0233 | - |
dc.identifier.uri | http://hdl.handle.net/10261/41992 | - |
dc.description | 8 páginas, 11 figuras, 1 tabla. | es_ES |
dc.description.abstract | In this paper, a set-up based on the internal IR-laser deflection technique is described. This technique allows measurement of the temperature gradient and free-carrier concentration inside power semiconductor devices with high spatial (35 µm) and time (less than 1 µs) resolution. The internal IR-laser deflection technique consists in the measurement of deflection and absorption of an IR-laser beam passing through a biased power device. After describing the operational principle and the experimental set-up, the postprocessing methodology followed to extract the temperature gradient and free-carrier concentration is detailed. In order to show the set-up functionality, the drift region of a 600 V PT-IGBT device has been studied. These measurements are very helpful for performing reliability or thermal management studies on power semiconductor devices. | es_ES |
dc.description.sponsorship | This work was partially supported by the CICYT, project TIC 2000-1403-C003-03, and by the EC Growth Project ATHIS (G1RD-CT-2002-00729). | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Institute of Physics Publishing | es_ES |
dc.rights | closedAccess | es_ES |
dc.subject | Power semiconductor devices | es_ES |
dc.subject | Internal device temperature | es_ES |
dc.subject | Free-carrier concentration | es_ES |
dc.subject | Laser deflection sensing | es_ES |
dc.title | Internal infrared laser deflection system: a tool for power device characterization | es_ES |
dc.type | artículo | es_ES |
dc.identifier.doi | 10.1088/0957-0233/15/5/034 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1088/0957-0233/15/5/034 | es_ES |
dc.identifier.e-issn | 1361-6501 | - |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.languageiso639-1 | en | - |
item.fulltext | No Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.openairetype | artículo | - |
Aparece en las colecciones: | (ICMAB) Artículos (IMB-CNM) Artículos |
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