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http://hdl.handle.net/10261/41992
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Título: | Internal infrared laser deflection system: a tool for power device characterization |
Autor: | Perpiñà, X.; Jordà, Xavier; Mestres, Narcís CSIC ORCID ; Vellvehi Hernández, Miquel; Godignon, Philippe; Millán, José; Kiedrowski, H. von | Palabras clave: | Power semiconductor devices Internal device temperature Free-carrier concentration Laser deflection sensing |
Fecha de publicación: | 2004 | Editor: | Institute of Physics Publishing | Citación: | Measurement Science and Technology 15(5): 1011-1018 (2004) | Resumen: | In this paper, a set-up based on the internal IR-laser deflection technique is described. This technique allows measurement of the temperature gradient and free-carrier concentration inside power semiconductor devices with high spatial (35 µm) and time (less than 1 µs) resolution. The internal IR-laser deflection technique consists in the measurement of deflection and absorption of an IR-laser beam passing through a biased power device. After describing the operational principle and the experimental set-up, the postprocessing methodology followed to extract the temperature gradient and free-carrier concentration is detailed. In order to show the set-up functionality, the drift region of a 600 V PT-IGBT device has been studied. These measurements are very helpful for performing reliability or thermal management studies on power semiconductor devices. | Descripción: | 8 páginas, 11 figuras, 1 tabla. | Versión del editor: | http://dx.doi.org/10.1088/0957-0233/15/5/034 | URI: | http://hdl.handle.net/10261/41992 | DOI: | 10.1088/0957-0233/15/5/034 | ISSN: | 0957-0233 | E-ISSN: | 1361-6501 |
Aparece en las colecciones: | (ICMAB) Artículos (IMB-CNM) Artículos |
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