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dc.contributor.authorPerpiñà, X.-
dc.contributor.authorJordà, Xavier-
dc.contributor.authorVellvehi Hernández, Miquel-
dc.contributor.authorVobecky, J.-
dc.contributor.authorMestres, Narcís-
dc.date.accessioned2011-10-06T08:37:38Z-
dc.date.available2011-10-06T08:37:38Z-
dc.date.issued2010-05-
dc.identifier.citationJournal of The Electrochemical Society 157(7): H711-H720 (2010)es_ES
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/10261/40666-
dc.description10 páginas, 10 figuras, 3 tablas.es_ES
dc.description.abstractThe combination of emitter control with local lifetime tailoring by ion irradiation is experimentally analyzed in fast-recovery high power diodes. For this purpose, the carrier lifetime and excess carrier concentration profiles are measured and modeled within the low doped region of unirradiated and helium irradiated diodes under low current densities (<20 A/cm2). The interest in working under these current conditions responds to the fact that the only recombination mechanism that modulates the steady-state carrier concentration is that of the multiphonon-assisted case (Shockley–Read–Hall model). This enables us to extract parameters for their modeling under arbitrary working conditions and to detect the influence of ion irradiation on the excess carrier distribution. For a better comprehension of the results, the excess carrier profile in the unirradiated diode is physically analyzed in detail by an analytical model. Afterward, physical simulations are also carried out, employing the experimental lifetime profiles as input parameters. As a result, a very good agreement between simulation predictions and experiments is observed, which is used to explain, by the support of analytical expressions, how the ion-irradiation process can improve the diode operation at low current densities during the late phase of the reverse recovery.es_ES
dc.description.sponsorshipThis work has been partially supported by the “Consejo Superior de Investigaciones Científicas” (CSIC) (under contract “Junta para la Ampliación de Estudios,” JAE-Doc), the Spanish Ministry of Science and Innovation (research programs: THERMOS TEC2008- 05577 and RUE CSD2009-00046), and the Ministry of Education, Youth and Sports of the Czech Republic (research program no. MSM 6840770017).es_ES
dc.language.isoenges_ES
dc.publisherElectrochemical Societyes_ES
dc.rightsopenAccesses_ES
dc.titleAnalysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densitieses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1149/1.3421974-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1149/1.3421974es_ES
dc.identifier.e-issn1945-7111-
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
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