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Título: | Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers |
Autor: | Vellvehi Hernández, Miquel; Gálvez Sánchez, José Luis CSIC ORCID; Perpiñá Giribet, Xavier; Jordà, Xavier; Godignon, Philippe; Millán, José | Palabras clave: | IGBT Reverse blocking AC/AC converter Matrix Converter |
Fecha de publicación: | nov-2010 | Editor: | Elsevier | Citación: | Microelectronic Engineering 87 (11) : 2323-2327 (2010) | Resumen: | A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices. | Versión del editor: | http://dx.doi.org/10.1016/j.mee.2010.03.011 | URI: | http://hdl.handle.net/10261/40474 | DOI: | 10.1016/j.mee.2010.03.011 | ISSN: | 0167-9317 | E-ISSN: | 1873-5568 |
Aparece en las colecciones: | (ICE) Artículos (IMB-CNM) Artículos |
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