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A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy

AuthorsBattistig, Gabor; García López, J. ; Morilla, Yolanda
Crystal structure
Transmission electron microscopy (TEM)
Rutherford backscattering spectrometry in channeling geometry (RBS/C)
Spectroscopic ellipsometry (SE)
High resolution electron microscopy (HREM)
Issue Date3-Nov-2006
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 100(9): 093507 (2006)
Abstract4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4×1014, 1×1015, and 2×1015 cm−2 with current density of 2.5 μA cm−2. The samples were subsequently annealed at 1100 °C in N2 for 1 h in order to analyze their structural recovery. The disorder induced in both sublattices by the Al+ ions was studied by backscattering spectrometry in channeling geometry with a 3.5 MeV He2+ beam. The results were compared with the optical properties of the samples measured by spectroscopic ellipsometry. In a previous work, we concluded that during the postimplantation annealing of a highly damaged SiC crystalline material the short distance order can be recovered, while the long distance disorder remains. We also presented the possibility to have grains of different polytypes oriented faraway from the original direction. Now, this alternative is confirmed by the cross-sectional transmission and high resolution electron microscopy studies, carried out to obtain information about the crystal structure.
Description5 páginas, 5 figuras, 1 tabla.-- et al.
Publisher version (URL)http://dx.doi.org/10.1063/1.2360150
Appears in Collections:(CNA) Artículos
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