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Analysis and Modeling of the Non-Linear Sampling Process in Switched-Current Circuits - Application to Bandpass Sigma-Delta Modulators

AutorRosa, José M. de la ; Pérez-Verdú, Belén ; Medeiro, Fernando ; Río, Rocío del; Rodríguez-Vázquez, Ángel
Palabras claveSwitched-Current Circuits
Bandpass Sigma-Delta Modulators
Fecha de publicaciónago-2001
EditorInstitute of Electrical and Electronics Engineers
CitaciónJ.M. de la Rosa, B. Pérez-Verdú, F. Medeiro, R. del Río and A. Rodríguez-Vázquez, “Analysis and Modeling of the Non-Linear Sampling Process in Switched-Current Circuits - Applications to Bandpass Sigma-Delta Modulators”. Proc. of the 15th European Conference on Circuit Theory and Design, pp. I.309-I.312, Espoo (Finland), August 2001.
ResumenThis paper presents a precise model for the transient behaviour of Fully Differential (FD) SwItched-current (SI) memory cells placed at the front-end of high-speed A/D interfaces. This model allows us to analyze the main errors associated to the S/H process, namely: excess transfer-function delay and harmonic distortion. For the latter, the analysis is extended to BandPass ΣΔ Modulators (BP-ΣΔMs) and a closed-form expression is derived for the third-order intermodulation distortion. Time-domain simulations and experimental measurements taken from a 0.8μm CMOS 4th-order BP-ΣΔM silicon prototype validate our approach.
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