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dc.contributor.authorVázquez, M.-
dc.contributor.authorSilveira, Juan Pedro-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorPérez, M.-
dc.contributor.authorArmelles Reig, Gaspar-
dc.contributor.authorMiguel, José Luis de-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.date.accessioned2011-03-29T10:51:53Z-
dc.date.available2011-03-29T10:51:53Z-
dc.date.issued1990-06-01-
dc.identifier.citationJournal of Crystal Growth 102(4): 891-898 (1990)es_ES
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10261/33876-
dc.description8 páginas, 6 figuras, 1 tabla.es_ES
dc.description.abstractExperimental results on 0.3 μm thick (A1As)m(InAs)n superlattices (m, n = 1, 2, 3, 5, 10 monolayers) grown by atomic layer molecular beam epitaxy on (100) GaAs substrates are presented, X-ray and Raman experiments show that they are decoupled from the substrate in the range of composition studied. These results are compared with lattice relaxation data of thick layers of InAs (A1As) grown on A1As (InAs) by the same technique.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccesses_ES
dc.titleAtomic layer molecular beam epitaxy of InAs/A1As heterostructureses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/0022-0248(90)90857-H-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/0022-0248(90)90857-Hes_ES
Appears in Collections:(IMN-CNM) Artículos
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