English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33876
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Atomic layer molecular beam epitaxy of InAs/A1As heterostructures

AuthorsVázquez, M.; Silveira, Juan Pedro ; González Sotos, Luisa ; Pérez, M.; Armelles Reig, Gaspar ; Miguel, José Luis de; Briones Fernández-Pola, Fernando
Issue Date1-Jun-1990
CitationJournal of Crystal Growth 102(4): 891-898 (1990)
AbstractExperimental results on 0.3 μm thick (A1As)m(InAs)n superlattices (m, n = 1, 2, 3, 5, 10 monolayers) grown by atomic layer molecular beam epitaxy on (100) GaAs substrates are presented, X-ray and Raman experiments show that they are decoupled from the substrate in the range of composition studied. These results are compared with lattice relaxation data of thick layers of InAs (A1As) grown on A1As (InAs) by the same technique.
Description8 páginas, 6 figuras, 1 tabla.
Publisher version (URL)http://dx.doi.org/10.1016/0022-0248(90)90857-H
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.