English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33875
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates

AuthorsRuiz, A.; González Sotos, Luisa ; Mazuelas Esteban, Ángel José ; Briones Fernández-Pola, Fernando
Issue DateNov-1989
CitationApplied Physics A 49(5): 543-545 (1989)
AbstractInAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the modulated deposition of one or both component species, provides InAs layers with excellent flat morphology, independently of the total thickness. A detailed study of the evolution of the electron diffraction (RHEED) pattern indicates that a complete decoupling between the InAs epitaxial layer and the GaAs substrate is reached in less that 10 monolayers. Evidence is obtained that layer-by-layer nucleation takes place from the beginning of the growth.
Description3 páginas, 3 figuras, 1 tabla.-- PACS: 68.55.+b
Publisher version (URL)http://dx.doi.org/10.1007/BF00617022
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.