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Title

Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates

AuthorsRuiz, A.; González Sotos, Luisa ; Mazuelas Esteban, Ángel José ; Briones Fernández-Pola, Fernando
Issue DateNov-1989
PublisherSpringer
CitationApplied Physics A 49(5): 543-545 (1989)
AbstractInAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the modulated deposition of one or both component species, provides InAs layers with excellent flat morphology, independently of the total thickness. A detailed study of the evolution of the electron diffraction (RHEED) pattern indicates that a complete decoupling between the InAs epitaxial layer and the GaAs substrate is reached in less that 10 monolayers. Evidence is obtained that layer-by-layer nucleation takes place from the beginning of the growth.
Description3 páginas, 3 figuras, 1 tabla.-- PACS: 68.55.+b
Publisher version (URL)http://dx.doi.org/10.1007/BF00617022
URIhttp://hdl.handle.net/10261/33875
DOI10.1007/BF00617022
ISSN0947-8396
Appears in Collections:(IMN-CNM) Artículos
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