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Atomic layer molecular beam epitaxy (Almbe) of III–V compounds: Growth modes and applications

AuthorsBriones Fernández-Pola, Fernando ; González Sotos, Luisa ; Ruiz, A.
Issue DateDec-1989
CitationApplied Physics A 49(6): 729-737 (1989)
AbstractA new development of molecular beam epitaxy (MBE) for III–V compounds is described, based on cyclic perturbation of the growth front at atomic layer level by periodic pulsing, alternating or interrupting the molecular beams. The modification of the growth mechanism caused by this perturbations is discussed and related to periodic changes of surface stoichiometry which induce 2D growth mechanism by enhanced layer nucleation. Under appropriate modulation conditions, an atomic layer by layer growth mode can be achieved. A practical implementention of this mode, that we denote atomic layer MBE (ALMBE), is considered in which only group V beams are pulsed in a specially designed effusion cell. A number of growth applications of ALMBE are presented, including growth of highly mismatched heterostructures and short period superlattices containing two different group V elements such as arsenic and phosphorous.
Description9 páginas, 7 figuras.-- PACS: 68.55. +b, 82.40.Dm, 61.14.Hg
Publisher version (URL)http://dx.doi.org/10.1007/BF00617001
Appears in Collections:(IMN-CNM) Artículos
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