Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/33866COMPARTIR / EXPORTAR:
 SHARE
 CORE
BASE
|
|
| Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
| Título: | Silicon migration during MBE growth of doped (A1, Ga)As films |
Autor: | González Sotos, Luisa CSIC ORCID | Fecha de publicación: | nov-1986 | Editor: | Springer Nature | Citación: | Applied Physics A 41(3): 237-241 (1986) | Resumen: | Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration. | Descripción: | 5 páginas, 5 figuras.-- PACS: 68.55, 66.30J.-- et al. | Versión del editor: | http://dx.doi.org/10.1007/BF00616845 | URI: | http://hdl.handle.net/10261/33866 | DOI: | 10.1007/BF00616845 | ISSN: | 0947-8396 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
Mostrar el registro completo
CORE Recommender
SCOPUSTM
Citations
22
checked on 12-abr-2024
WEB OF SCIENCETM
Citations
21
checked on 22-feb-2024
Page view(s)
318
checked on 16-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.