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Hydrogen sulphide doping of GaAs and AlxGa1−xAs grown by molecular beam epitaxy (MBE)

AuthorsBriones Fernández-Pola, Fernando ; Golmayo, Dolores ; González Sotos, Luisa ; Miguel, José Luis de
Issue Date1985
CitationApplied Physics A 36(3): 147-151 (1985)
AbstractH2S gas has been used during molecular beam epitaxy (MBE) growth of GaAs and Al x Ga1–x As as sulphur vector forn-type doping. Doping efficiencies are less than 10–3 at usual growth temperatures, and are limited by an incorporation competitive surface process, probably 2Ga+H2S→Ga2S+H2. In AlxGa1–x As forx >= 0.2 the doping efficiency is further reduced by carrier freeze-out at deep levels. Measured thermal activation energies depend on growth conditions and remain relatively low even up to the direct-indirect bandgap crossover for substrate temperatures in the 585–645 ‡C range.
Description5 páginas, 6 figuras, 1 tabla.-- PACS: 68.55, 73.60
Publisher version (URL)http://dx.doi.org/10.1007/BF00624935
Appears in Collections:(ICMM) Artículos
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